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Surface Modulation of SiGe by Hydrogen Plasma Process with Site Exchange Mechanism between Si and Ge
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Surface Modulation of SiGe by Hydrogen Plasma Process with Site Exchange Mechanism between Si and Ge

Y. Ishii, R. Sugano, Y.-J. Lee, W.-F. Wu, K. Maeda 和 M. Miura
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, 頁碼.345-347
2022
DOI: https://doi.org/10.1109/EDTM53872.2022.9797937

摘要

Dry Etch Hydrogen Plasma Segregation and SiGe Calculations Hydrogen Ion exchange Modulation Plasma applications Si-Ge alloys Surface segregation Temperature Dry-etch Exchange mechanism Hydrogen plasma treatments Hydrogen plasmas Ion energies Lows-temperatures Plasma process Segregation and sige Site exchange Surface modulations Silicon
We present hydrogen plasma treatment at low temperature that modulates SiGe surface. In this study, we investigated the mechanism of SiGe surface modification after hydrogen plasma exposure, which produces a Si-rich surface. We reveal the mechanism of the surface modulation, which is induced by Si surface segregation (i.e., ion-energy induced site exchange between Si and Ge across different layers). We also propose an ion-energy localization model that drives the Si segregation. Ab-initio calculation also proves how energetically favorable the site exchange is. © 2022 IEEE.

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