摘要
We report the vertically stacked Ge diamond-shape nanowires (NWs) gate-all-around field-effect transistor (GAAFET) with ferroelectric (Fe) layer HZO =2 nm /\mathbf{Al}_{2}\mathbf{O}_{3}=4 nm. The in-situ ALD ozone treatment is applied to reduce the interface defect density (Dit). Furthermore, the transfer \mathbf{I}_{\mathbf{D}} 1 D - V G curves of the device shows superior performance with a minimum steep sub-threshold slope (\mathbf{SS}_{\text{MIN}}) of 49 \mathbf{mV}/\mathbf{dec} . The formation of the vertically stacked Ge diamond-shape NWs Fe-GAAFET could be compatible with current CMOS technology platform and have high potential for high-performance IC applications.