Abstract
A novel One Time Programming (OTP) cell with nitride-based storage node has been proposed for logic nonvolatile memory applications without any additional masks or process steps for pure CMOS logic process. The fully-logic-compatible cell has been successfully demonstrated in 45nm-node technology with a cell size of 0.064um2, which achieves the smallest cell size, especially with 2- bits per cell characteristics. This cell adapting source side injection programming scheme has a wide on/off window and a superior writing efficiency. Highly reliable data retention characteristics also have been demonstrated in nitride storage node. Since the storage mechanism decouples from logic transistor gate oxide thickness, the scalability of the new cell is very promising along with advanced CMOS technology with high feasibility and solution for embedded NVM in advance logic circuits.