Abstract
In this study, a sensor integration chip is designed and implemented based on the standard TSMC 0.35 μm 2-polysilicon 4-Metal (2P4M) process. This study implements and further monolithic integrates the tri-axis accelerometer, tri-axis magnetic sensor, pressure sensor, humidity sensor, and temperature sensor on a single chip. Moreover, various designs and post-CMOS process technologies have been developed to enhance the performances of the sensors. First, the growing of nanoporous anodic aluminum oxide (np-AAO) thin layer on sensing electrodes has been demonstrated. Second, the stacking of pure oxide layers as the mechanical structures has been realized. The initial and thermal deformations of suspended MEMS structure respectively due to the thin film residual stresses and thermal expansion coefficient (CTE) mismatch are reduced. Third, the low temperature pick-place and UV-curing process has been developed to integrate a bulk block on a suspended CMOS MEMS structure. Fourth, the CMOS-MEMS structure with the embedded in-plane magnetic coils is designed implemented using the metal layers and tungsten vias. The coils act as a solenoid to generate in-plane magnetic field. Finally, the concepts to exploit these available CMOS MEMS sensors to establish the motion hub and environment hub have also been demonstrated.