Characterization and Design of Multilevel Cell Phase Change Memory toward Resistance Drift, Multilevel Cell Programming, and Stress-Induced Cell Variation

Dissertation

Khwa, Win-San

Doctor of Philosophy (PHD), 國立清華大學, 電機工程學系所

2016

Abstract

相變化記憶體

多階儲存技術

特性分析

電阻值飄移

phase change memory

multi-level cell technology

charactertization

resistance drift

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Title: Characterization and Design of Multilevel Cell Phase Change Memory toward Resistance Drift, Multilevel Cell Programming, and Stress-Induced Cell Variation
Translated title: Characterization and Design of Multilevel Cell Phase Change Memory toward Resistance Drift, Multilevel Cell Programming, and Stress-Induced Cell Variation
Creators: Khwa, Win-San
Contributors: Chang, Meng-Fan (Advisor)
Awarding Institution: 國立清華大學, 電機工程學系所; Doctor of Philosophy (PHD)
Theses and Dissertations: Doctor of Philosophy (PHD), 國立清華大學, 電機工程學系所
Language: English
Resource Type: Dissertation
Date published: 2017