Abstract
Based on the progress of the high voltage process, power integrated circuit has more and more widely applications. The demand for power components is also increasing. Insulated-gate bipolar transistor (IGBT) is one of the best candidates for a high current, low on-resistance and high breakdown voltage application. However, to integrate the IGBT with other low-voltage control circuits requires a lateral architecture, an LIGBT, within the silicon wafer. However, the conduction of the LIGBT parasitic bipolar transistor may cause a serious substrate current. So that such an integrated circuit will face the risk of latch-up effect. In order to suppress the substrate current without using the high cost and heat dissipation troubled silicon-on-insulator (SOI) technology, a junction isolation technology (JI) design is proposed and verified in this dissertation that uses a 0.5μm high voltage process technology and an epitaxy technology. A junction isolation lateral IGBT (JI-LIGBT) is proposed to suppress the substrate current with breakdown voltage greater than 700V. In addition, the quasi-vertical double diffusion metal-oxide-semiconductor field effect transistor (QVDMOSFET) is included to improve the saturation current. In order to make the application more extensive, we designed a 200V JI-LIGBT with an N-type buried layer (BL) and multi-channel structure to more suppress the substrate current. Measurement results show that this structure has a lower substrate current and its operating voltage is higher than 160V. Since power integrated circuits are often operated in harsh environments. The high temperature DC characteristics of a high-voltage bulk Si lateral insulated-gate bipolar transistor in junction isolation (JI-LIGBT) technology is studied intensively in this dissertation. The current density distribution in the off-state at different temperatures of three types of device structure is compared. By using the Quasi-vertical DMOSFET (QVDMOS or multi-channel, MC) structure, the electron injection from the channel into the n-drift region is significantly enhanced, and the current density is improved. In addition, by extending the p-top layer to the NPN anode not only improves the breakdown voltage but also reduces the substrate current as well as ensures high temperature stability.