Abstract
Since 2004, scientists successfully exfoliated one-atomic layer carbon layer from graphite, namely graphene, this incredible material had been triggered our passion and enthusiasm until now. Owing to the fabulous properties of various aspects such as optical, electrical, thermal, graphene is highly expected a potential material in all respects. Monolayer and large area of graphene on Cu via chemical vapor deposition (CVD) process make a notable step toward pushing graphene into market. However, the inevitable transfer process badly sacrificed the quality of graphene, hindering the following application. To address this issue, we successfully develop a direct deposition of graphene by means of gaseous catalytic species, Cu vapor, as well as established the mechanism from the view point of Cu vapor. Transparent conducting film is the main target of using graphene for replacing conventional ITO. Nevertheless, the conductivity was still far behind ITO by far. We combined metal meshes with covering graphene, not only improving conductivity as good as ITO but also enhancing the stability in harsh environment by graphene shielding. Thanks to the great development of graphene, transition metal dichalcogenide was also attracted everyone’s attention due to the similar layer structure and its nature band gap property. Differencing with conventional CVD process via furnace, we firstly exploited advanced technique, such as laser, microwave system, to aim for fast and low temperature growth. Moreover, we fabricated the vertical structure of MoS2 with exposing edges via microwave system, and further proved its highly active property in which benefited the application of electrochemistry field.