GaN-Based Devices on Silicon Substrate with Schottky Extension for High Power and RF Applications

Dissertation

Tsou, Chuan Wei

Doctor of Philosophy (PHD), 國立清華大學, 電子工程研究所

2015

Abstract

氮化鎵

射頻

蕭特基延伸

Gallium-Nitride

Radio Frequency

Schottky extension

因申請專利緣故，資料延後公開

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Title: GaN-Based Devices on Silicon Substrate with Schottky Extension for High Power and RF Applications
Translated title: GaN-Based Devices on Silicon Substrate with Schottky Extension for High Power and RF Applications
Creators: Tsou, Chuan Wei
Contributors: Hsu, Shuo Hung (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Doctor of Philosophy (PHD)
Theses and Dissertations: Doctor of Philosophy (PHD), 國立清華大學, 電子工程研究所
Language: English
Resource Type: Dissertation
Date published: 2016