Abstract
One-dimensional nanostructures, such as nanowires and nanotubes, have attracted great attention because of their peculiar optical, electrical and mechanical properties. 1D nanostructures illustrate the smallest dimension structure that can be efficiently transport electrical carriers, and thus are ideally suited to the critical and ubiquitous task of moving charges in integrated nanoscaled systems. Second, 1D nanostructures can also exhibit device function, and thus can be exploited as both the wiring and device elements in architectures for functional nanosystems. III-V nitrides (GaN, InGaN, AlGaN) are promising wide bandgap materials for photonic and electronic device applications such as LEDs in blue and ultraviolet regions. Gallium nitride is a direct and wide-band-gap (3.4 eV) semiconductor possessing very strong Ga-N bonds. These and some other features make this compound almost an ideal material for green/blue/ultraviolet optoelectronics. The present thesis focused on the synthesis and characterization of nanostructures of the Ga-related components. The thesis includes the following topics: (1) growth processes of GaN nanowires synthesized by metalorganic chemical vapor deposition, (2) template-free synthesis of tubular nanostructures by metalorganic chemical vapor deposition, (3) synthesis of GaN/CNT/Si/SiOx nanocables by metalorganic chemical vapor deposition, (4) high yield synthesis of Ga-containing oxide/CNT nanocables, (5) thermal properties of Ga-containing oxide/CNT nanocables; and (6) one-step growth of zinc blend GaN@carbon nanotube nanocables.