Abstract
In this thesis, self-assembled epitaxial Co1-xNixSi2 and nickel germanide nanowires are fabricated by reactive deposition epitaxy technique. Self-assembled epitaxial Co1-xNixSi2 nanowires are formed on thin-oxide-capped (001)Si substrates. The thin native oxide layer can promote the growth of nanowires. The epitaxial relationships between nanowires and substrates and the elemental distributions of Ni and Co in nanowires are analyzed, and the formation process of nanowires is discussed. Self-assembled epitaxial nickel germanide nanowires are formed on Ge substrates. They grow parallel to the <110>Ge directions and have high aspect ratios on (110)Ge. The native germanium oxide layer can be removed by degassing and flashing in the ultrahigh vacuum chamber before the reactive deposition epitaxy process. This procedure can lower the formation temperature of nickel germanide nanowires and improve their morphology. Two-probe current-voltage measurements of the nickel germanide nanowires exhibit the low resistivity and high maximum current density.