Abstract
The BaPbO3 (BPO) electrode has the potential in improving the performance of perovskite-type ferroelectric materials, such as Pb(Zr,Ti)O3 (PZT) and (Ba,Sr)TiO3 (BST) due to the similarity in crystal structure. Besides, BPO containing Pb benefits the Pb-based ferroelectric films for preventing the formation of Pb-deficient layer near ferroelectric/electrode interface and degradation of electrical properties. In this thesis, it is found that the BPO electrode improves the electrode/PZT and electrode/BST interfaces and results in the enhancement of electrical properties. The catalytically inactive BPO prevents the hydrogen-induced degradation in ferroelectric layer even after 400℃ forming gas annealing. With the aid of suitable template layers, the highly (001)-, (110)- and (111)-oriented PZT films can be fabricated on BPO. Among them, the PZT/BPO/Ru and PZT/BPO/Pt/Ru stacks have the potential for application in 1T1C stack structures for high density memory. Both stacks can decrease the bit-to-bit variations of polarization and prevent the diffusion of lead and oxygen. In addition to highly-oriented films on Si, the BPO and PZT films can grow epitaxially on LaAlO3 and SrTiO3 substrates at the temperatures as low as 350℃ and 475℃ with the two-step method. Well-saturated hysteresis loops can be obtained with the remanent polarization of 35.54μC/cm2 and coercive field of 102.67 kV/cm.