Abstract
Based on our optical measurements results, we confirm that PAMBE-grown wurtzite GaN nanorods are completely relaxed, strain-free single crystals. The high emission efficiency and excitonic properties of GaN nanorods have been demonstrated. Moreover, vertically aligned GaN nanorod arrays can act as subwavelength low-refractive-index optical media in both transparent and opaque regions. We have also found that the optical confinement effects dominate the linearly polarized properties of GaN nanorods with diameters in the subwavelength regime of 30−90 nm. We believe that the polarized luminescence reported here for GaN can also be found for other semiconductor materials and for other optical measurements, such as electroluminescence and cathodoluminescence. Because of the superior material properties of GaN nanorods in terms of optical transparency, availability of n- and p-type conductivity, and excellent thermal and chemical stabilities, these results could have important implications for nanophotonics and optoelectronics applications.