Abstract
Graphene, an isolated mono-atomic carbon layer conformed into two-dimensional honeycomb lattice building blocks, has triggered off numerous novel research possibilities, due to its intriguing physics and as an emerging paradigm for relativistic condensed matter physics as well as showing great promise for its application in next generation electronics. In 2010 the Nobel Prize in physics was awarded to A. Geim and K. S. Novoselov for their pioneer work in solating single-atomic-layer of graphite sheet on silicon dioxide. Graphene is the thinnest natural 2D material consisting of hexagonal carbon network in only one atom thick. Now a days, graphene can be synthesized by chemical vapor deposition on transition metal surface in wafer scale and even up to the 30 inches. For the relevant processes for graphene electronic devices fabrication, there are currently several hurdles to be overcome before widespread industrial production of graphene-based devices becomes a reality. In the course of this dissertation, we try to link semiconductor processes and adapt them to work with gaphene. Chapter 1 will introduce an overview of the fundamental properties of graphene. Graphene has many outstanding properties, of special importance for graphene electronics is the electrical properties. How to fabricate graphene electronics is described in chapter 2, but for graphene electronics production to reach mainstream status, there are still a few difficulties to be overcome. Furthermore, we try to combine the graphene electronics process with the semiconductor industry. The first step for the process is graphene film fabrication. Chapter 3 will introduce an efficient and cost-effective CVD process by remote catalyzation in the form of copper vapor. In chapter 4, we will show the laser engraving can be used in layered materials such as graphene with enough precision to ablate one atomic-layer each time through the precise control of the surface reaction. Photochemical elimination of an individual layer becomes possible, while leaving the next exposed layer intact after processing. This tech-nology also can be used to pattern the graphene. We also discuss the theoretical framework for layer-resolved thinning technology in chapter 5. So far, we provide two important technological breakthroughs about graphene electronics fabrication process. In chapter 6, we try to fabricate a graphene photodetector by making use of these new graphene fabrication process. In short, graphene has followed a relatively fast paced track (around 10 years) from its discovery down to being actively considered as the key material in technologies close to industrial production and availability to the wider public. It is clear that this direction will lead to exciting new possibilities and has certainly opened the door for the active study of other 2D layered materials, such as transition metal di chalcogenides.