Abstract
One dimensional nanostructures such as nanowires, nanotubes, nanobelts have been extensively studied because of the peculiar optical, electrical and mechanical properties. In the present research, we synthesized the novel titanium silicide nanostructures, identified the structures and elucidated the growth mechanisms. In addition, the unique properties of the nanostructures were investigated. A vapor transport and condensation method was used to grow the titanium silicide nanostructures. Ti5Si4 nanobats grew on the titanium substrate at 900 ℃. The electrical transport and field emission properties of the nanobats were measured. Two-dimensional (2D) Ti5Si4 network structures were fabricated on the titanium substrate at 800 ℃. The growth directions of the network are along the two equivalent symmetric axes [100] and [010] with the same lattice constant. The 2D network structures were likely developed from the branched nanowires. Titanium tetrafluoride (TiF4) precursor was utilized to synthesize the C54-TiSi2 nanowires on the silicon substrate. The C54-TiSi2 thin film was formed on the silicon substrate as the seed layer. The C54-TiSi2 nanowires then grew above the seed layer with a thickness of 1 µm on the silicon substrate. The electrical transport and field emission properties of the nanowires were investigated.