Abstract
As the semiconductor and telecommunications industries continue to become more sophisticated, there is an increasing interest in the NIR region of the spectrum for characterization of optical fibers, light sources, and other related materials. Standard InGaAs has a long wavelength cutoff of 1.68 µm and is the most suitable material for detection of near infrared. In this dissertaion, the spin on Zn diffusion technology is uiltized for fabrication high performance and high yield InGaAs p-i-n photodetectors. The diffusion is performed in a RTA system and has an ability for 3-inch-diameter InP epitaxial wafer process. Using this technology, we have succeeded in fabricating a variety of InGaAs p-i-n detectors, which includes high speed phtoodiodes, large area photodiodes, wide spectral range photodiodes (from 400nm to 1700nm wavelength), linear photodiode arrays (LPA) and focal plane arrays (FPA). For 10GHz InGaAs p-i-n photodiodes, the diameter of coupling aperture only have 30□m in older to reduce junction capacitace. To conquer this issue of coupling and alignment between single mode fiber (SMF) and photodiode, a fiber-hole technology and a self-positioned micro-ball lens technology are demonstrated. According to the results, a high responsivity and large coupling alignment tolerance is obtained. For large area photodiodes, a high yield beyond 90% of 2-mm-diameter photodiode has achieved. In addition, infrared imaging by our 1x512 LPA and 320x256 FPA integrated with readout IC all have accomplished.