Abstract
The first part includes: 1. Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh vacuum deposited Ti thin films on (001) Si, 2. Auto correlation function analysis of phase formation in the initial stage of interfacial reactions of multilayered titanium-silicon thin films, 3. Formation of titanium silicides in well-mixed multilayered Ti-Si thin films at room temperature. The second part is on self-assembled TiSi2 quantum dot arrays on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The formation of the one-dimensional ordered structure is attributed to the nucleation of TiSi2 nanodots on the surface undulations induced by step bunching on the surface of SiGe film. The step bunching is owing to the miscut of the wafers from normal to the (001)Si direction.