Abstract
Epitaxial growth of titanium nitride film on sapphire is achieved at 600℃, 400℃, 200℃, 25℃ and -200℃ by means of reactive sputtering. Exception low full width at half maximum (FWHM) from X-ray rocking curve of 0.07°(252 arcsec) is measured for film grown at 600℃ with a thickness of 50 nm. The full-width at half maximum (FWHM) from the X-ray rocking curve of 0.48°(1728 arcsec) is exceptionally low for the film grown at –200℃ with a thickness of 50 nm. The epitaxial growth of titanium on Al2O3(0 0 0 1) was achieved using magnetron sputtering with no substrate heating. The heating power supply was turned off during sputtering. The titanium layer was composed of two layers: Ti(1 0 –1 0)/Ti(0 0 0 1)/Al2O3(0 0 0 1). Both X-ray and electron diffraction were applied to establish the epitaxial relationship: Ti(1 0 –1 0) || Ti(0 0 0 1) || Al2O3(0 0 0 1) Ti[0 0 0 1] || Ti[1 0 –1 0] || Al2O3[1 1 –2 0]