Abstract
Growing of graphene has rapidly developed giving large and important steps as large area monolayer graphene grown on Copper or high quality epitaxial graphene grown on Silicon-Carbide. However, there are still diculties to overcome as the high thermal budget used and the possibility of growing on insulating substrates to avoid transfer methods. In addition, growing mechanisms of graphene on di erent substrates are not completely elucidated yet. For that reason, this work focusses on the understanding of graphene growing mechanism; and then, on improving growing conditions to manipulate and modify graphene electrical properties.