Abstract
The main purpose of the paper is to develop the technique of the plasma immersion ion implantation ( PIII ), and to study the sheath propagation in terms of the negative high voltage pulse on the target. A high-density inductively coupled plasma source and a high-voltage pulse system have been successfully developed. The plasma density is as high as 10^12 #/cm3, the electron temperature is about 1.8eV, and the plasma area is 12cm in diameter with an uniformity 10%. The high-voltage pulse system can generate a pulse with 60kV, 15A, and the pulse width 1us~20us. the sheath dynamics of the non-uniform plasma is presented, including the transition of the sheath motion from the supersonic regime to the subsonic regime and the ion-acoustic rarefaction wave. In addition, the dielectric surface of the target is also studied. A one-dimension fluid model has been developed to simulate the sheath evolution and a comparison between the numerical and the experiment is done. The plasma characteristics such as the plasma density, the plasma impedance and so on are investigated, and the change of the electron energy distribution from the Druyvesteyn to the Maxwellian during the E-H mode transition is measured. Finally, apply the PIII technique to the Silicon-On-Insulator fabrication and the electroless Copper.