Abstract
In this thesis, the Programmable Contact Anti-Fuse (PCAF) cell realized by standard logic process without any extra mask or process step is proposed for initializing setting or code storage of advance logic circuits. The PCAF cell consists of a select transistor in series with a programmable dielectric layer, the Resistance Protection Oxide (RPO) layer, which embedded in CMOS logic process. This One-Time-Programmable (OTP) cell is programmed by hard breakdown of the RPO layer under the contact region. The programming voltage required is less than 5V, with low programming current, which can be easily supported by peripheral circuitry. The PCAF cells can be arranged in a NOR-type array with a minimized size of 0.18 □m2 under 90nm technology. According to the analyses and discussion of the measurement results of samples made by 90nm and 0.13□m logic process, the PCAF cell is demonstrated to be adapted easily in advanced logic process. The current scaling limitations of the present OTP memories programmed by dielectric breakdown are extended, where the PCAF cell becomes the one of the most promising solution for advance logic NVM application.