Abstract
In this paper, the resistive switching characteristics of MgO-based with a thin Cu insertion layer are reported in the Pt/MgO/Pt memory devices by ion beam deposition. With fixed thickness of dielectric layer sandwiched in Pt electrodes, we alter the thickness of the copper insertion and select the best electrical properties among them. It is found that besides the distinct reduction in memory switching parameters in SET and RESET voltages, an improvement in the stability of their dispersions were also achieved. The effects of Cu insertion layer on improving the resistive switching properties are analyzed by electrical measurements, Secondary Ion Mass Spectroscopy (SIMS), X-ray photoelectron spectroscopy (XPS), temperature dependence of resistance, and transmission electron microscopy (TEM). Additionally, on the comparison of switching mechanism in the MgO memory device with and without Cu nanocrystal embedded, the dominating conduction mechanism in low resistance state between them is the same; however, the dominating conduction mechanism in high resistance state is Poole-Frenkel emission and shottky emission, respectively, consisting with Cu atoms as defect trapping sites.