Abstract
Recent development efforts for optical components stress on compactness and low power consumption. Compactness requires higher level integrations. Electroabsorption modulated laser (EML) is one of the most popular integrated optoelectronics developed following the above trend and has become one of the most promising components for short distance optical communications. This thesis focuses on the design of a process simplified structure for electroabsorption modulated laser. We designed two different structures and analyzed their electrical and optical characteristics. The geometric designs based on ridge waveguide and vertically coupled structures require only one MOCVD regrowth. Furthermore, AlGaInAs material was applied to the active layers for better temperature performance and it is widely used in uncooled laser diode. The existing fabrication technology was supported by Industrial Technology Research Institute (ITRI). We fabricated two kinds of EMLs, and compared the difference. Device A shows a wide operating temperature range for the modulator. For Device B, the integration of electroabsorption modulator with DFB laser was successfully demonstrated.