Abstract
Abstract A metal/insulator tunnel transistor (MITT) that operates by controlling the current flowing through a tunnel insulator has been fabricated. The NbOx incidate large is about 40nm wide. Although it hard to define the precise insulator size from the AFM image, the I-V characteristics of the tunnel insulator indicate that the tunnel insulator is formed. Effective modulation of the tunneling current with gate voltage at room temperature is observed. These results and some suggestions for future device improvements are discussed.