Abstract
For the distance more than 100 kilometer fiber communication system, low dispersion and intrinsic attenuation is necessary. So the EA modulator integrated DFB Laser is more ideal. In this thesis, we used butt-jointed technology to fabricate integration single source. We used 1.55mm InGaAsP for active layer growth on InP substrate . For electroabsorption modulator part, the structure is similar to DFB Laser. We changed the wavelength muti quantum- well . The wavelength is 1.50mm for single modulate. We have successfully fabricated external modulate Laser (EML) with extinction ratio of -5.51dB, coupling effect of 0.6, side mode suppression ratio (SMSR) of 30dB, light-current threshold current of 65 mA and slop efficiency (S.E.) of 0.05. We also measured the only DFB Laser part with side mode suppression ratio (SMSR) of 32dB, light-current threshold current of 52 mA and slop efficiency (S.E.) of 0.18. After integration, although the threshold current、S.E.、SMSR were reduce. We can improve them in structure, fabricate and crystal growth three part three way. In present we have arrived the static modulate stage.