Abstract
The main purpose of this thesis is to fabricate a high voltage 4H-SiC schottky diode. The conventional schottky barrier diodes (SBDs) typically have large leakage current when they are biased in a reverse condition, and their breakdown voltage is low. In order to reduce this leakage current, we designed Junction Barrier Controlled Schottky diodes (JBS) by forming P+ grid using ion implant. Furthermore, we also designed a combination of the mesa and junction termination extension (Mesa-JTE) structure to form edge termination of the diodes. The advantage of Mesa-JTE is reducing the dependence of breakdown voltage on JTE dose. JBS and JTE structures with difference size and difference JTE widths are fabricated. The measurement results show that the JBS structure can reduce the reverse leakage current effectively and the breakdown voltage increase with the JTE length. The best achieved breakdown voltage is 1600V, measured on a Ni-JBS diode.