Abstract
The so-called BCD process technology is to integrate transistor devices, such as Bipolar, CMOS and LDMOS, into one chip so as to form a Smart Power integrated circuit. And the main function of a Bipolar device is to provide high-frequency and high-drive current to meet the needs of the circuit. The purpose of the paper is to discuss the DC characteristic of a BJT device in 0.25um BCD process. On the one hand, we measure and analyze the DC characteristic of an actual BJT device; on the other hand, we use the software to stimulate and explore the internal electrical properties of a BJT device. Furthermore, we analyze the reasons of a downward peak in the IB curve when there is a lower VBE bias on the Gummel plot. It is our hope that by understanding the performance and cause of the DC characteristics of BJT device, we can improve its properties, and moreover, advance the entire performance of power integrated circuits.