Abstract
In this thesis, a 0.35μm SiGe BiCMOS gyrator cell active inductor has been designed and realized into circuit. In the first chapter, motivation and thesis organization is introduced. In Chapter 2, different types of inductor are discussed, including spiral inductor, bond-wire inductor and active inductor. In Chapter 3, based on gyrator cell, different effects caused by different components in the circuit are simulated. Using a feedback resistor technique and an additional capacitor can generate an inductance whenever we need. The quality factor of these active inductors can remain above 20 easily. Spiral inductors provide by the foundry can be substituted in some cases by active inductor. Using spiral inductor provides high performance at quality factor and can shrink the chip area significantly. In Chapter 4, a SiGe cascode Low Noise Amplifier with active inductive load and passive inductive load are designed. And their performance are compared. S11 and S22 of the passive load are smaller than -10dB. S21 equals to 15.9dB. Noise Figure equals to 2.25dB and the power dissipation equals to 11.6mW. The other circuit with active load has S11 and S22 below -10dB at 5.2GHz. S21 equals to 20dB. Noise Figure equals to 4 dB. Power dissipation of the total circuit equals to 16.5mW. Finally, in Chapter 5, conclusion of this work and a short future work are given.