Abstract
In this thesis,we designed,fabricated and characterized the resonant-cavity light emitting diodes ( RCLED ) emitting at 1550 nm wavelength.The strained multi-quantum-well ( SMQW ) active region consisting of five 5 nm thick In0.73Ga0.27As0.85P0.15 quantum wells with an emission peak wavelength near 1530 nm,sandwiched between two AlInAs / AlGaInAs DBRs which yielding a reflectivity greater than of 99 %. The experimental results indicated that the 10−µm window diameters for the 1550 nm RCLEDs have a forward voltage (VF) of 2.1 V at a current of 20 mA at 20 °C,which the maximum light output power of 130 μW and highest external quantum efficiency of 4.6 %. The increases of injected current and temperature lead to a red shift at a rate of 0.08 nm/mA and 0.4 nm/℃ for the gain peak.From that we could get the relationship between temperature and injected current is 0.2 mA/℃.