Abstract
In recently years, some elecrtonic systems become imporant and popular, especially for consumable and portable application. The representatives are MP3, cell phone and LCD monitor…etc. Among these products, power ICs play an important role. Basically, power ICs have two features which take high operating voltage and show low resistance. RESURF LDMOSFET is one kind of power IC. It have the same I-V characteristic with MOSFET. It also can be produced by normal MOS process. So it is a suitable candidate for integrating with electronic devices. P-ring LDMOSFET is one advanced version. By enlarging RESURF effect and adjusting N-epi concentration, it would have more superior performance than traditional RESURF LDMOSFET. This thesis will discuss the structure and some process parameters of P-ring LDMOSFET. And it will also compare the difference between traditional RESUF and P-ring LDMOSFET. According to computer simulation results, we could understand how to improve device performance. Finally, we think P-ring LDMOSFET have the potential to replace traditional RESURF LDMOSFET in the future.