Abstract
The power device in this thesis is Lateral DMOSFET (Double-diffusion MOSFET), and it’s easily to integrated into planar process. Because conventional LDMOSFET has shortages of large on-resistance and cell pitch, we choose Trench LDMOSFET that is recently introduced to improve these characteristics. The subject for this thesis would be the design of a 200V power devices,it could be applied to PDP(Plasma Display Panel) driver IC.In this work We use simulation tools like Tsuprem4 and Medici to simulate the electric characteristics of Trench LDMOSFET and RESURF LDMOSFET. Finally,the results of simulation are discussed.