Abstract
摘 要在這篇論文裡，我們對於氮化鈦/鋁-矽-銅/氮化矽/矽化鈦/p+-n矽接觸的接觸特性及長時間可靠度做了一些研究。這些研究是利用交叉橋式Kelvin接觸電阻測試結構及二步驟快速熱金屬矽化而成。最小的接觸面積是0.25×0.25微米平方。形成接面的製程為在高劑量硼離子接面上直接形成矽化鈦。 可靠性測試結果顯示深次微米接觸的電阻在大電流密度下隨著施壓時間的增加而增加，可能的原因包含了電子漂移及焦耳加熱效應。這種惡化的現像是值得在未來超大型積體電路中做更深入的研究。The contact behavior and long term reliability stress of Al-based /TiN/Tisi2 p+ n contact have been studied in this work.This was achived through the use of cross-bridge Kelvin contactresitancestructure and the use of 2-step rapid thermalsilicidation of self-aligned silicide ( salicide).The minmumcontact area was 250nm*250nm.The Ti film was deposited throughcollimator or not in sputter.The sepecific contact resistivitywsa about 4.55~6ohm-cm2.The result of reliability test showedthat the contact resistance of submicron contact increased ordecreased with the stress time under high currnt denity stress.The possible reason are electromigration and joule heating.Thus,this degration is worth studying in future ULSI circuits.