Abstract
Conventional TSPDs (Thyristor Surge Protective Devices) have to reduce the doping of the drift region or increase its thickness for high voltage application. It causes the on resistance (Ron) rises rapidly and limits the rating current of the TSPD in high voltage application.In recent years, an innovative structure, called the super-junction was invented. The outstanding feature of this structure is that the structure maintains a high doping concentration at high voltage ratings. Therefore, the on resistance of this structure is much smaller than that of the conventional drift region. Although there are many researches successful combining the super-junction with power MOS and IGBT, rarely researches to discuss the result when the super-junction embedded in the Thyristor.In this thesis, we are trying to combine the super-junction with the thyristor, and designing a 600V super-junction TSPD. Though the performance of this device is not as good as expected, the characteristics and the comparison with the conventional TSPD are still presented in this thesis.