Abstract
In the modern deep sub-micron integrated circuit products the transistor is sensitive to surge and electrostatic discharge. Among all the surge protective devices, SCR has a very good protective effect. It also has been applied as one of the surge protective devices for a long time.General power devices usually either reduce the doping of the drift region or increase its length for high voltage application. This kind of design is also seen among the traditional Thyristor Surge Protective Devices (TSPDs), which have relatively increased on-resistance (Ron) and limits the rated current. In recent years, the CoolMOSFET uses a Super-junction structure which enables a lower on-resistance than other power devices under the same condition.In the thesis, we are trying to combine the super-junction with the thyristor device in a lateral-structured manner rather than a traditional vertical-structured way. In the simulation, we adopt top-view and side-view structures to analyze the electrical properties of the device. It is shown that there is an effective promotion of breakdown voltage when field plate is adjusted. Moreover, with the same concentration and super-junction, there is a smoother electric field distribution, which results in a lower on-resistance and a higher breakdown voltage. Then, according to the above, we can manage to design the device masks, tape it out, and try to fabricate a 600V lateral super-junction TSPD.