Abstract
Write failure and read disturb limited the minimum operation voltage (VDDmin) of SRAM. We proposed a single supply 8-transistor SRAM cell with improved write margin (WM) and read-static noise margin (RSNM) to achieve low operation voltage.The proposed 8T SRAM cell employ differential data-aware supply voltage, which is supplied by a bitline pair, to enlarge its write margin. In addition, a bitline-boost scheme is proposed to improve read stability of the proposed 8T cell. Two 39Kb SRAM macros, 6T and proposed 8T, were fabricated using a 45nm CMOS technology. The measured VDDmin of our 8T SRAM macro is 210mV lower than that of 6T SRAM macro.