Abstract
Observation of visible photoluminescence in silicon nanostructure embedded in sio2 film has recently attracted considerable interest in silicon-based optoelectronic application.We have fabricated light emitting silicon rich oxide (SRO) films that may contain nanocrystal silicon islands by using a Plasma-Enhanced-Chemical-Vapor-Deposition (PECVD) system. In this thests, photoluminescence (PL) and Fourier-Transform-Infrared-Spectroscopic (FTIR) were utilized to identify the characteristics of the SRO films. It was observed that intense ultra-violet (UV) PL emitted from some of our samples. There was no shift in PL spectrum after rapid thermal annealing and with argon dilution. By varying the silane flow rate slightly, this thesis provided adjustable recipe for SRO films that could emit lights from UV to orange. The FTIR spectra showed that the oxide structure was related to the silane flow rate. When the silane flow rate was increased, the structure of silicon dioxide became worse and the concenrattion level of hydrogen and nitrogen atoms were raised. The dramatically evolution of PL spectrum and intense UV emission from SRO film indicated the feasibility of the optoelectronic fabrication.