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Aptamer immobilized AlGaN/GaN High Electron Mobility Transistors for Detection of Human Immunodeficiency Virus type 1 Reverse Transcriptase Protein
Thesis

Aptamer immobilized AlGaN/GaN High Electron Mobility Transistors for Detection of Human Immunodeficiency Virus type 1 Reverse Transcriptase Protein

Chu, Chia Ho
Masters, 國立清華大學, 奈米工程與微系統研究所
2014

Abstract

人類免疫缺陷病毒第一型 高電子遷移率電晶體 適體 Human immunodeficiency virus type 1 (HIV-1) High electron mobility transistor (HEMT) Aptamer
The development of rapid, accurate, and portable diagnostic tools is very important because infectious diseases are the big threat to the global health. The acquired immunodeficiency syndrome (AIDS) triggered by human immunodeficiency virus type 1 (HIV-1) has been a public-health problem in the world. Typical detection for diagnosing HIV is the enzyme-linked immunosorbent assay (ELISA)[1, 2] and nucleic acid amplification by PCR[3, 4]. However, ELISAs and PCRs require high cost equipment and specific reagents, such as special buffers and enzymes. Also, the whole detection procedure is time-consuming. These methods are not suitable for diagnosing in resource-limited countries, such as Africa. In contrast, the high electron mobility transistors (HEMTs) have been applied widely to detecabstrectt biological samples in the real-time detection [5-9]. In particular, the high sensitivity and rapid measurements of the high electron mobility transistors are suitable for developing the new way to detect the patients with AIDS. In this study, the HIV-1 RT-specific aptamer was immobilized on AlGaN/GaN HEMTs. We successfully operate AlGaN/GaN HEMTs in physiological salt concentration to overcome the ionic screening effect and detect low concentration of HIV-1 RT protein (1 fM).

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