Abstract
This study implements a MEMS gyroscope by TSMC 0.18μm 1P6M standard CMOS process. The structure which fabricates by this process must encounter the problem of residual stress warping. In order to reduce the deformation of the residual stress, this study integrates several structure design method in existing literatures. The design methods which be implemented in this research including symmetric stack structure and pure oxide structure are expected to achieve a structure of low residual stress warping. By this way, the fabrication parameter of this standard platform would not be modified to fit the demand of structure and the advantage of this platform would also be kept include monolithic integration capability and the good ability of electrical routing. However, for the gyroscope, the problem of low signal response may have chance to be compensated by the advantage of this platform which could make sub-micron sensing gaps.