Abstract
This study implements a thermoelectric infrared sensor using TSMC 0.35µm 2P4M standard CMOS process to discuss the distribution of releasing holes affect the performance of the sensor. In MEMS device, releasing holes design is related to the time takes in the releasing process. However, the distribution of the releasing holes may affect the heat transfer path and changed the sensor performance. In this study, a CMOS-MEMS thermoelectric infrared sensor with strip-via releasing holes is designed for high responsivity when operating at low pressure and an existing design as comparison. The discrete releasing holes spread on the absorber membrane as existing design. Strip-via releasing holes split the absorber membrane into serpentine shape as proposed type. The thermocouples are a composite of two poly structure connected by metal1 and patterned along with the absorber membrane. In comparison, the design with strip-via releasing holes will increase responsivity 6.2 times faster than the existing design at low pressure. Moreover, the proposed design has the responsivity of 146.4VW-1, detectivity of 0.29*108cmHz0.5W-1 at 25mtorr and response time of 25.9ms.