Abstract
This study presents CMOS-MEMS capacitive type altimeter with low pressure application. The sensing range is defined below 101.32kPa for detecting low pressure change (about 100Pa). The altimeter containing a reference pressure chamber coated around with parylene-C film and a larger pre-deformation to improve sensitivity and resolution. In application, the altimeter have been designed and implemented by using TSMC 0.35mm 2P4M CMOS fabrication process, and easy post-CMOS process.