Abstract
With the rapid development of the IoT (Internet of Things) and smart devices, People pay more attention to and demand more need for high quality optical sensors. In recent years, tremendous progress has been reported with silicon based devices in visible range. For nonvisible range, such as in ultraviolet and Infrared region, wide bandgap material and III-V semiconductors are usually adopted, which is expensive and incompatible. Therefore, we can develop a silicon-based ultraviolet photodetector using a standard CMOS process. It can be easily integrated with the IC circuit and significantly reduce production costs. In this thesis, we propose a new design and fabrication method of Al-SiO2-Al (metal-dielectric-metal structure) visible-blind ultraviolet Fabry-Pérot bandpass filter, integrated with the current gain increment interdigitated lateral bipolar phototransistors. We successfully demonstrate suppression of visible light with the highest responsivity 9.78E-2 (A/W) at wavelength of 350 nm.