Abstract
The present study is aimed to design a giant magnetoresistive (GMR) sensors based on CMOS(Complementary Metal Oxide Semiconductors) technologies. The main focus is on how to achieve a higher sensitivity . In this design, we first make sure the architecture of the system. then we design the amplifier and use Hspice to verify the result .The giant magnetoresistive sensor is patterned by electron-beam lithography, and a sputtering system is used for deposition before lift-off. In this paper, we present the concept of the sensor circuit and the fabricated process,then discuss the problem we have encountered during the experiment.