Abstract
Dielectric films of SiOx and SiNx by plasma enchanced chemical vapor deposition (PECVD) have been widely used in the fabrication of microelectronic devices. They have been used for insulation between conducting layers, for diffusion and ion implantation masks, for capping doped films to prevent the loss of dopants, and for passivation to protect devices from impurities, moisture, and scratches. Besides, dielectric films have been deposited on Ⅲ-Ⅴ compound semiconductor as a promising gate insulator for MISFETs. Characteristics of Ⅲ-Ⅴ compound semiconductor have high electron mobility and large drift saturation velocity, so development of suitable insulator for MISFETs has been a pursue goal. Material characterizations were investigated by depositing dielectric films on Si-substrate. Electrical characterizations in metal-insulator-semiconductor (MIS) structure were also investigated. In this study, we treated our samples with furnace annealing (FA) or rapid thermal annealing (RTA) process at different temperatures to find the optimum condition for our samples. It can be noted that FA or RTA process can improve the quality of SiNx/InGaAs, but can’t improve that of SiOx/InGaAs. This is suggested to be that the phenomenon of inter-diffusion after FA or RTA process easily occurs in SiOx/InGaAs samples compared to SiNx/InGaAs samples. We can verify the phenomenon by the measurement of SIMS.