Abstract
This study focuses on designing a high performance broadband amplifier using distributed topology. The main target is to reduce the power consumption and chip area, and improve the gain-bandwidth of distributed amplifier at the same time. First, the bandwidth-enhanced cascode topology by inductor is adopted. And the circuit is fabricated by ASE Above-IC technology and 0.18μm tsmc standard CMOS technology respectively. The Above-IC technology could improve the passive components characteristics and reduce the impact of skin effect in high frequency. From the measurement, Above-IC technology could improve the circuit high frequency performance, and reduce the power consumption. Next, the transformer-based distributed amplifier using tsmc 0.18μm and 0.13μm standard CMOS technology are presented. With transformers replacing the inductors in traditional distributed amplifier, the high gain-bandwidth distributed amplifier could be achieved under low power consumption.