Abstract
In this thesis, we focus on design, implementation, and characterization of the high speed optical transceiver for optical interconnect applications. The second and third chapters describe optical transceiver front-end, which not only design and implement of the integrated circuits but also demonstrate the optical measurements with optical devices, including photo detector (PD) and MD (Modulator Diode). The forth chapter proposes an 80 Gb/s 4×4 high speed switch combined with optical transceiver circuits with O/E interface for optical interconnect applications. Finally, the conclusion and future prospect are given. In Chapter 2, a compact 10-Gb/s inductorless transimpedance amplifier (TIA) packaged with avalanche photo detector (PD) has been implemented and demonstrated with optical measurements. The proposed TIA fabricated in 0.18-μm CMOS achieves a 3-dB bandwidth of 7 GHz with termination of photodiode capacitance of 0.22 pF, consuming only 9 mW under the supply voltage a of 1.8 V. The transimpedance gain attains 55.3 dBΩ with a core area as small as 0.0065 mm2. The optical measurement has been demonstrated, which shows well opened eye diagram at a data rate of 10 Gb/s. In Chapter 3, a compact 40 Gb/s inductorless Modulator driver is proposed and implemented in 40 nm CMOS for the purpose of integration with the silicon-based high speed modulator, provided by University of Southampton Optoelectronics Research Center. Measurement results demonstrate that this driver, operating at 12.5 Gb/s, can achieve a 1V swing under the termination of 50 Ω. The circuit operates at 4 V supply voltage and consumes 377mW with a core area only 0.012 mm2. In Chapter 4, a 4×4 80 Gb/s Symmetric Time Division Multiplexing (STDM) O/E interface switch implemented in CMOS 40nm process is proposed. The maximum transmission speed is 20 Gb/s in each channel. In this switch, we combine the optical transceiver to achieve a fully-integrated high-speed switch with O/E interface for optical interconnect application. The optical receiver can generate a 69.6 dBΩ transimpedacne gain with a 21 GHz bandwidth. The transmitter provides 8 mA driving current for the laser diode. The total power consumption of the STDM switch is 450 mW at the supply voltage of 1.5 V. The extra electrostatic discharge (ESD) protection circuit is adopted in this chip to avoid transistors damage.