Design and Fabrication of AlGaN/GaN High Current Density Fin Structure High-Electron-Mobility-Transistors

Thesis

Chang, Tun-Hsiang

Masters, 國立清華大學, 電子工程研究所

2017

Abstract

氮化鋁鎵/氮化鎵

鰭狀閘極

高載子遷移率電晶體

AlGaN/GaN

Fin Gate

High-Elctron-Mobility-Transistor

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Title: Design and Fabrication of AlGaN/GaN High Current Density Fin Structure High-Electron-Mobility-Transistors
Translated title: Design and Fabrication of AlGaN/GaN High Current Density Fin Structure High-Electron-Mobility-Transistors
Creators: Chang, Tun-Hsiang
Contributors: Wu, Meng-Chyi (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Masters
Theses and Dissertations: Masters, 國立清華大學, 電子工程研究所
Language: English
Resource Type: Thesis
Date published: 2018