Design and Fabrication of High Breakdown AlGaN/GaN HEMTs with Various Gate Structure

Thesis

Liou, Guan-Yi

Masters, 國立清華大學, 電子工程研究所

2016

Abstract

氮化鋁鎵/氮化鎵

異質接面

高電子遷移率電晶體

高崩潰電壓

離子佈植

鈍化層

蕭特基閘極

金屬-絕緣層-半導體閘極

矽基板

碳化矽基板

閘極漏電流

AlGaN/GaN

Heterojunction

High electron mobility transistor (HEMT)

High breakdown voltage

Ion implantation

Passivation layer

Schottky gate

Metal-insulator-semiconductor (MIS) gate

Silicon substrate

Silicon carbide substrate

Gate leakage

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Title: Design and Fabrication of High Breakdown AlGaN/GaN HEMTs with Various Gate Structure
Translated title: Design and Fabrication of High Breakdown AlGaN/GaN HEMTs with Various Gate Structure
Creators: Liou, Guan-Yi
Contributors: Wu, Meng-Chyi (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Masters
Theses and Dissertations: Masters, 國立清華大學, 電子工程研究所
Language: English
Resource Type: Thesis
Date published: 2017