Design and Fabrication of High-Frequency AlGaN/GaN HEMTs on Low-Resistivity Silicon Substrates

Thesis

Wei, Shang-Chi

Masters, 國立清華大學, 電子工程研究所

2017

Abstract

氮化鎵

氮化鋁鎵

低阻值矽基板

截止頻率

震盪頻率

高電子遷移率電晶體

GaN

Low-resistivity silicon substrate

AlGaN

HEMT

maximum oscillation frequency

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Title: Design and Fabrication of High-Frequency AlGaN/GaN HEMTs on Low-Resistivity Silicon Substrates
Translated title: Design and Fabrication of High-Frequency AlGaN/GaN HEMTs on Low-Resistivity Silicon Substrates
Creators: Wei, Shang-Chi
Contributors: Hsu, Shuo-Hung (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Masters
Theses and Dissertations: Masters, 國立清華大學, 電子工程研究所
Language: English
Resource Type: Thesis
Date published: 2018