Abstract
Abstract In this study, we use the technology of semiconductor process to fabricate a Micro-filament on the silicon substrate. We designed the photonic crystal structures with different period on the filament and expected that structure can confined the band to achieve the purpose of this study. We will establish the process flow, and use two different processes. In the old process, we faced with some problems. One is the annealing process can’t at high temperature, and therefore can’t obtain a low resistance for tungsten film, that caused the current through the filament area hardly in the subsequent measurement. Because the heat can’t be accumulated on the tungsten and the filament emitted difficultly. The other is the suspended process, was easily influenced by surface tension of liquids. The devices tend to collapse and reduced yield. In the new process, the two problems can be effectively solved. This study will discuss the properties of different films, using four-point probe, SEM, EDS, XRD, analyze the characteristics of different films and establish better deposited parameters. We also use NKT system and vacuum probe system for measuring reflectance and emission spectral of the device.