Design and Fabrication of Normally-off Gallium Nitride HEMT with P-GaN

Thesis

LIN, YI TING.

Masters, 國立清華大學, 電子工程研究所

2017

Abstract

常閉型

氮化鎵

HEMT

Normally-off

Gallium Nitride

HEMT

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Title: Design and Fabrication of Normally-off Gallium Nitride HEMT with P-GaN
Translated title: Design and Fabrication of Normally-off Gallium Nitride HEMT with P-GaN
Creators: LIN, YI TING.
Contributors: Wu, Meng-Chyi (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Masters
Theses and Dissertations: Masters, 國立清華大學, 電子工程研究所
Language: English
Resource Type: Thesis
Date published: 2018