Design and Fabrication of RF Power AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Thesis

Lai, Bo-Kang

Masters, 國立清華大學, 電子工程研究所

2017

Abstract

氮化鎵

射頻功率

高介電常數

高電子遷移率電晶體

GaN

radio-freauency

high-k

HEMT

abstract hide

1 Record Views

Title: Design and Fabrication of RF Power AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
Translated title: Design and Fabrication of RF Power AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
Creators: Lai, Bo-Kang
Contributors: Wu, Meng-Chyi (Advisor)
Awarding Institution: 國立清華大學, 電子工程研究所; Masters
Theses and Dissertations: Masters, 國立清華大學, 電子工程研究所
Language: English
Resource Type: Thesis
Date published: 2018